存储器
| 图片 | 型号 | 品牌 | 分类名称 | 封装 | 描述 | 价格 | 数据手册 |
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93C66A-I/P | MICROCHIP(美国微芯) | EEPROM | PDIP-8 | 93C66A I/P | ¥6.467 |
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M95160-WMN6P | ST(意法半导体) | EEPROM | SO-8 | M95160 WMN6P | ¥1.663 |
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GX2505 | GXCAS(中科银河芯) | EEPROM | TO-92-3 | 16Kb Add-Only Memory | ¥7.701 |
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GXE00 | GXCAS(中科银河芯) | EEPROM | TO-92-3 | 256-Bit 1-Wire | ¥2.836 |
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IS49NLC18160-33WBLI | ISSI(美国芯成) | 动态随机存取存储器(DRAM) | TWBGA-144(11x18.5) | IS49NLC18160-33WBLI | ¥105.743 |
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71V67803S150PFG | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | TQFP-100(14x20) | 71V67803S150PFG | ¥37.893 |
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71V3558SA166BQGI | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-165(13x15) | 71V3558SA166BQGI | ¥23.562 |
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71V3557S85BGI | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | PBGA-119(14x22) | 71V3557S85BGI | ¥23.562 |
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70V659S10BFG | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | BGA-208 | 70V659S10BFG | ¥544.241 |
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70V631S10BF | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-208(15x15) | 70V631S10BF | ¥544.241 |
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70V7519S166BCI | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-256(17x17) | 70V7519S166BCI | ¥553.044 |
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70V7519S200BC | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-256(17x17) | 70V7519S200BC | ¥527.911 |
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70T3599S166BC | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-256(17x17) | 70T3599S166BC | ¥500.769 |
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70V631S15BC | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-256(17x17) | 70V631S15BC | ¥417.302 |
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70T659S10BCI | RENESAS(瑞萨)/IDT | 静态随机存取存储器(SRAM) | CABGA-256(17x17) | 70T659S10BCI | ¥598.74 |
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AT25040B-XHL-B | MICROCHIP(美国微芯) | EEPROM | TSSOP-8 | AT25040B XHL B | ¥4.009 |
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IS49NLS18320A-33WBL | ISSI(美国芯成) | 动态随机存取存储器(DRAM) | TWBGA-144(11x18.5) | IS49NLS18320A-33WBL | ¥100.603 |
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MT29F64G08CBABAWP:B | micron(镁光) | NAND FLASH | TSOP-48-18.4mm | MT29F64G08CBABAWP:B | ¥38.882 |
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24FC01-I/P | MICROCHIP(美国微芯) | EEPROM | PDIP-8 | 24FC01 I/P | ¥3.784 |
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S29GL512S11FHI010 | CYPRESS(赛普拉斯) | NOR FLASH | TSOP-56 | S29GL512S11FHI010 | ¥26.887 |
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暂无数据